Datasheet > 1N939UR-1

1N939UR-1

更新时间： 2024-11-29 20:00:07

品牌	Logo	应用领域
CDI-DIODE		二极管
页数	文件大小	规格书
15页	494K
描述
Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2

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1N939UR-1 技术参数

生命周期：	Obsolete	包装说明：	O-LELF-R2
Reach Compliance Code：	unknown	风险等级：	5.71
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
最大功率耗散：	0.5 W	认证状态：	Not Qualified
参考标准：	MIL-19500/156M	标称参考电压：	9 V
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	最大电压容差：	5%
Base Number Matches：	1

1N939UR-1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 1 October 2004.

INCH-POUND

MIL-PRF-19500/156M

1 July 2004

SUPERSEDING

MIL-PRF-19500/156L

18 September 2003

* PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE

TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1,

AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1,

JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)

TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias

current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type

as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).

1.3 Maximum ratings. (Unless otherwise specified T_A= +25°C).

P_T

T_STGand T

I_ZM(1)

Power derating

above T_A= +25°C

500

mA dc

°C

mW/°C

3.33

-65 to +175

(1) To guarantee voltage temperature stability, it is necessary to maintain an I_Zof 7.5mA dc.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...15

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与1N939UR-1相关器件

型号	品牌	获取价格	描述	数据表
1N939V	STMICROELECTRONICS	获取价格	9V, SILICON, VOLTAGE REFERENCE DIODE
1N93A	NJSEMI	获取价格	GOLD BONDED GERMANIUM DIODES
1N93BKLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.15A, 300V V(RRM), Germanium, DO-1,
1N93LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.15A, 300V V(RRM), Germanium, DO-1,
1N93TR	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.15A, 300V V(RRM), Germanium, DO-1
1N93TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.15A, 300V V(RRM), Germanium, DO-1,
1N94	NJSEMI	获取价格	Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
1N940	MICROSEMI	获取价格	9.0 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
1N940	NJSEMI	获取价格	9.0VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
1N940-1	MICROSEMI	获取价格	Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

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