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1N914TR PDF预览

1N914TR

更新时间: 2024-11-24 13:03:43
品牌 Logo 应用领域
威世 - VISHAY 二极管开关
页数 文件大小 规格书
4页 113K
描述
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2

1N914TR 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.38Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:784702
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Diodes, Axial Diameter Horizontal MountingSamacsys Footprint Name:MAL211816472E3
Samacsys Released Date:2019-08-29 10:40:49Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-35JESD-30 代码:O-XALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:4 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.3 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N914TR 数据手册

 浏览型号1N914TR的Datasheet PDF文件第2页浏览型号1N914TR的Datasheet PDF文件第3页浏览型号1N914TR的Datasheet PDF文件第4页 
1N914  
Vishay Semiconductors  
Fast Switching Diodes  
Features  
• Fast switching speed  
• High reliability  
e2  
• High conductance  
• For general purpose switching applications  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
94 9367  
Mechanical Data  
Case: DO35 Glass case  
Weight: approx. 125 mg  
Cathode Band Color: black  
Packaging codes/options:  
TR/10 k per 13" reel (52 mm tape), 50 k/box  
TAP/10 k per Ammopack (52 mm tape), 50 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
1N914  
Remarks  
1N914  
1N914-TR or 1N914-TAP  
Tape and Reel/Ammopack  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
100  
Unit  
V
Non repetitive peak reverse  
voltage  
VRM  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
75  
75  
V
V
75  
V
VR(RMS)  
IF  
RMS Reverse voltage  
53  
V
Forward continuous current  
Average rectified current  
300  
200  
mA  
mA  
half wave rectification with  
IFAV  
resistive load and f > 50 MHz  
Non repetitive peak forward  
surge current  
t = 1s  
IFSM  
1
A
t = 1µs  
IFSM  
Ptot  
4
A
I = 4 mm, TL = 25 °C  
Power dissipation  
500  
mW  
Thermal Characteristics  
T
= 25 °C unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Thermal resistance junction to ambient air  
Junction temperature  
I = 4 mm, TL = constant  
RthJA  
Tj  
300  
+ 175  
K/W  
°C  
Tstg  
Storage temperature range  
- 65 to + 175  
°C  
Document Number 85622  
Rev. 1.7, 16-Feb-07  
www.vishay.com  
1

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