Datasheet > 1N6378E3

1N6378E3

更新时间： 2024-12-01 15:39:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	174K
描述
Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

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1N6378E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.49
最小击穿电压：	21.2 V	外壳连接：	ISOLATED
最大钳位电压：	25.2 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.52 W	认证状态：	Not Qualified
最大重复峰值反向电压：	18 V	子类别：	Transient Suppressors
表面贴装：	NO	技术：	AVALANCHE
端子面层：	Matte Tin (Sn) - annealed	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N6378E3 数据手册

1N6373 thru 1N6389, e3

or MPTE-5 thru MPTE-45C, e3

1500 WATT LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389

are JEDEC registered selections for both unidirectional and bidirectional

devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru

1N6389 are bi-directional where they all provide a very low specified

clamping factor for minimal clamping voltages (V_C) above their respective

breakdown voltages (V_BR) as specified herein. They are most often used

in protecting sensitive components from inductive switching transients or

induced secondary lightning effects as found in lower surge levels of

IEC61000-4-5 . They are also very successful in protecting airborne

avionics and electrical systems. Since their response time is virtually

CASE 1

instantaneous, they can also protect from ESD and EFT per IEC61000-4-2

and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional and bidirectional TVS series for thru-hole

mounting

• Designed to protect Bipolar and MOS

Microprocessor based systems.

•

Suppresses transients up to 1500 watts @ 10/1000 µs

• Protection from switching transients and induced RF

• ESD & EFT protection per IEC 61000-4-2 and -4-4

_clamping(0 volts to V_(BR)min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Working voltage (V_WM) range 5 V to 45 V

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

Low clamping factor (ratio of actual V_C/V_BR): 1.33 @ full

rated power and 1.20 @ 50% rated power

• Secondary lightning protection per IEC61000-4-5

•

Economical plastic encapsulated TVS for thru-hole mount

with 12 Ohms source impedance:

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are also available by

adding MQ, MX, or MV prefixes respectively to part

numbers, e.g. MX1N6373, etc.

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5

•

Surface mount equivalent packages also available as

SMCJ6373 – SMCJ6389 (consult factory for other

surface mount options)

with 2 Ohms source impedance:

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

•

RoHS Compliant devices available by adding “e3” suffix

Metal package axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 μs with repetition rate of 0.01% or

• CASE: Void-free transfer molded thermosetting

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

epoxy body meeting UL94V-0

•

Operating & Storage Temperatures: -65^oto +150^oC

• FINISH: Tin-Lead or RoHS Compliant annealed-

matte Tin plating solderable per MIL-STD-750

method 2026

Thermal Resistance: 22^ºC/W junction to lead at 3/8 inch

(10 mm) from body, or 82^ºC/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads (1oz)

and track width 1 mm, length 25 mm

• POLARITY: Cathode indicated by band

• MARKING: Part number and polarity diode symbol

• WEIGHT: 1.5 grams. (Approx)

•

Steady-State Power dissipation*: 5 watts at T_L< 40^oC, or

1.52 watts at T_A= 25^ºC when mounted on FR4 PC board

described for thermal resistance

Solder Temperatures: 260 ^oC for 10 s (maximum)

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• See “CASE 1” package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

10-09-2008 REVD

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N6378E3相关器件

型号	品牌	获取价格	描述	数据表
1N6378-E3/51	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6378-E3/54	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 P
1N6378-E3/73	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6378E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, ROH
1N6378HE3/54	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 P
1N6378HE3_A/C	VISHAY	获取价格	Trans Voltage Suppressor Diode,
1N6378MPTE-18C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon
1N6378RL4	ONSEMI	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-04, 2 PIN
1N6378RL4	MOTOROLA	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-02, 2 PIN
1N6378TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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