ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 -- Pulse Derating Curve
Fig. 1 -- Peak Pulse Power Rating Curve
100
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
10
75
50
1
0.1
25
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td -- Pulse Width (sec.)
Fig. 3 -- Pulse Waveform
150
25
50
75
150
175
200
0
100
125
TJ = 25°C
Pulse Width (td) is defined
tr = 10µsec.
TA -- Ambient Temperature (°C)
Peak Value
IPPM
as the point where the
peak current decays to
50% of IPPM
Fig. 4 -- Typical Junction Capacitance
Uni-Directional
100
50
Half Value – IPPM
2
100,000
10,000
1000
10/1000µsec. Waveform
as defined by R.E.A.
Measured at
Zero Bias
td
0
1.0
3.0
4.0
0
2.0
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
t -- Time (ms)
Measured at
Stand-Off
Voltage, VWM
Fig. 5 -- Typical Junction Capacitance
100,000
10,000
1,000
100
Measured at
Zero Bias
Bidirectional Type
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
100
1.0
10
100
200
V(BR) -- Breakdown Voltage (V)
Measured at
Stand-Off
Voltage, VWM
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
1
10
100
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
V(BR) -- Breakdown Voltage (V)
Fig. 7 --Typical Characteristics Clamping Voltage
50
100
50
Uni-Directional Only
TA = 25°C
10
1
10
6
8
10 12 14 16 18 20 22 24 26 28
VC -- Clamping Voltage (V)
1
5
10
50
100
Number of Cycles at 60 Hz
Document Number 88356
23-May-03
www.vishay.com
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