Datasheet > 1N6375HE3_A/C

1N6375HE3_A/C

更新时间： 2024-02-08 02:11:40

品牌	Logo	应用领域
威世 - VISHAY		局域网二极管
页数	文件大小	规格书
5页	103K
描述
Trans Voltage Suppressor Diode,

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1N6375HE3_A/C 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	O-PALF-W2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
Factory Lead Time：	9 weeks	风险等级：	5.68
其他特性：	EXCELLENT CLAMPING CAPABILITY	最小击穿电压：	11.7 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT APPLICABLE	极性：	UNIDIRECTIONAL
最大功率耗散：	6.5 W	参考标准：	AEC-Q101
最大重复峰值反向电压：	10 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT APPLICABLE	Base Number Matches：	1

1N6375HE3_A/C 数据手册

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com

Vishay General Semiconductor

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

Case Style 1.5KE

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

5.0 V to 18 V

6.0 V to 21.2 V

9.2 V to 21.2 V

1500 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

V_BR(uni-directional)

_BR(bi-directional)

P_PPM

MECHANICAL DATA

P_D

6.5 W

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant and commercial grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

I_FSM

200 A

T_Jmax.

Polarity

Package

175 °C

Uni-directional, bi-directional

1.5KE

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

DEVICES FOR BI-DIRECTION APPLICATIONS

meets JESD 201 class 2 whisker test

For bi-directional types, use C suffix (e.g. ICTE18C).

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾(fig. 3)

Power dissipation on infinite heatsink at T_L= 75 °C (fig. 8)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 100 A for uni-directional only

Operating junction and storage temperature range

See next table

6.5

P_D

I_FSM

200

V_F

3.5

T_J, T_STG

-55 to +175

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum

(2)

Revision: 16-Jan-18

Document Number: 88356

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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