Datasheet > 1N6298CHE3

1N6298CHE3

更新时间： 2024-01-02 11:13:48

品牌	Logo	应用领域
威世 - VISHAY		局域网二极管
页数	文件大小	规格书
7页	118K
描述
Trans Voltage Suppressor Diode, 1500W, 105V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN

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1N6298CHE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.66
击穿电压标称值：	130 V	最大钳位电压：	187 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
极性：	BIDIRECTIONAL	最大重复峰值反向电压：	105 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	MATTE TIN

1N6298CHE3 数据手册

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder Dip 260 °C, 40 seconds

Case Style 1.5KE

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_BRuni-directional

6.8 V to 540 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

_BRbi-directional

6.8 V to 440 V

1500 W

6.5 W

P_PPM

P_D

_FSM(uni-directional only)

T_Jmax.

200 A

175 °C

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use

(e.g. 1.5KE440CA).

or CA suffix

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

P_PPM

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

I_PPM

P_D

See next table

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

6.5

200

(2)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Maximum instantaneous forward voltage at 100 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for 1.5KE220 (A) and below; V_F= 5.0 V for 1.5KE250(A) and above

www.vishay.com

106

Document Number: 88301

Revision: 20-Sep-07

12 3 4 5 6 7

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与1N6298CHE3相关器件

型号	品牌	描述	获取价格	数据表
1N6298CHE3/54	VISHAY	Trans Voltage Suppressor Diode, 105V V(RWM), Bidirectional,	获取价格
1N6298C-HE3/54	VISHAY	1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN	获取价格
1N6298CHR	DIGITRON	Trans Voltage Suppressor Diode	获取价格
1N6298CL	EIC	BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
1N6298COX.120	MICROSEMI	Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格
1N6298COX.200	MICROSEMI	Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon,	获取价格

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