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1N6288 PDF预览

1N6288

更新时间： 2024-11-28 22:52:23
品牌 Logo 应用领域
TSC 二极管
页数 文件大小 规格书
3页 111K
描述
Transient Voltage Suppressor Diodes

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中文翻译

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1N6288 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.08其他特性：UL RECOGNIZED
最大击穿电压：56.1 V最小击穿电压：45.9 V
击穿电压标称值：51 V外壳连接：ISOLATED
最大钳位电压：73.5 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-201JESD-30 代码：O-PALF-W2
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：41.3 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N6288 数据手册

 浏览型号1N6288的Datasheet PDF文件第2页浏览型号1N6288的Datasheet PDF文件第3页 
1.5KE SERIES  
Transient Voltage Suppressor Diodes  
Voltage Range  
6.8 to 440 Volts  
1500 Watts Peak Power  
5.0 Watts Steady State  
DO-201  
Features  
UL Recognized File # E-96005  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
Exceeds environmental standards of MIL-STD-19500  
1500W surge capability at 10 x 100 us waveform, duty cycle:  
0.01%  
Excellent clamping capability  
Low zener impedance  
Fast response time: Typically less than 1.0ps from 0 volts to  
VBR for unidirectional and 5.0 ns for bidirectional  
Typical IR less than 1uA above 10V  
High temperature soldering guaranteed: 260°C / 10 seconds  
/ .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension  
Mechanical Data  
Case: Molded plastic  
Lead: Axial leads, solderable per MIL-STD-202,  
Lead: Method 208  
Polarity: Color band denotes cathode except bipolar  
Dimensions in inches and (millimeters)  
Weight: 0.94gram  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol  
Value  
Units  
P
eak  
Power D  
issipation at TA=25OC, Tp=1ms  
PPK  
Minimum1500  
Watts  
(
Note 1)  
Steady State Power Dissipation at TL=75 °C  
Lead Lengths .375”, 9.5mm (Note 2)  
PD  
5.0  
Watts  
Amps  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
(JEDEC method) (Note 3)  
IFSM  
200  
Maximum Instantaneous Forward Voltage at  
50.0A for Unidirectional Only (Note 4)  
VF  
3.5 / 5.0  
Volts  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to + 175  
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25OC Per Fig. 2.  
Notes: 2. Mounted on Copper Pad Area of 0.8 x 0.8” (20 x 20 mm) Per Fig. 4.  
Notes: 3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes  
Notes: 3. Maximum.  
Notes: 4. VF=3.5V for Devices of VBR 200V and V =5.0V Max. for Devices VBR>200V.  
≤
F
Devices for Bipolar Applications  
Notes: 1. For Bidirectional Use C or CA Suffix for Types 1.5KE6.8 through Types 1.5KE440.  
Notes: 2. Electrical Characteristics Apply in Both Directions.  
- 576 -  
123

中文翻译

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与1N6288相关器件

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1N6288.TR SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-201
1N6288/1 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 41.3V V(RWM), Unidirectional, 1 Element, Silicon
1N6288/1-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
1N6288/4E VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 41.3V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6288/4-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
1N6288/4E-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6288/4F VISHAY

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 		暂无描述
1N6288/4F-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6288/4G-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6288/4H VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 41.3V V(RWM), Unidirectional, 1 Element, Silicon, P

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