Datasheet > 1N6275

1N6275

更新时间： 2024-11-15 12:38:59

品牌	Logo	应用领域
鲁光 - LGE		二极管脉冲局域网
页数	文件大小	规格书
4页	191K
描述
BREAKDOWN VOLTAGE: 6.8 --- 200V PEAK PULSE POWER: 1500 W

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1N6275 数据手册

1N6267-1N6303A

Transient Voltage Suppressor

BREAKDOWN VOLTAGE: 6.8 --- 200 V

PEAK PULSE POWER: 1500 W

Features

DO-201AE

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

Glass passivated junction

1500W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.05%

Excellent clamping capability

Low incremental surge resistance

Fast response time: typically less than 1.0ps from 0 Volts to

V^(BR)for uni-directional and 5.0ns for bi-directional types

For devices with V(BR) 10V,ID are typically less than 1.0μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 51bs. (2.3kg) tension

Dimensions in millimeters

Mechanical Data

Case:JEDEC DO-201AE, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Weight: 0.032 ounces, 0.9 grams

Mounting position: Any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

P_PPM

I_PPM

Minimum 1500

SEE TABLE 1

Steady state pow er dissipation at T_L=75

ffffflead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

6.5

Peak forw ard surge current, 8.3ms single half

ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)

200.0

Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)

Typical thermal resistance junction-to-lead

V_F

R_θ_JL

3.5/5.0

Typical thermal resistance junction-to-ambient

R_θ_JA

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)200V, and V_F=5.0 Volt max. for devices of V_(BR)>200V

http://www.luguang.cn

mail:lge@luguang.cn

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与1N6275相关器件

型号	品牌	获取价格	描述	数据表
1N6275/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon
1N6275/100-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275/4G-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275/4H-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275/51-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275/54-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6275/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275/64	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275/66	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P

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