Datasheet > 1N6274

1N6274

更新时间： 2024-11-14 05:56:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	119K
描述
TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6274 数据手册

GALAXY ELECTRICAL

1N6267- - -1N6303A

BREAKDOWN VOLTAGE: 6.8 --- 200 V

PEAK PULSE POWER: 1500 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AE

Glass passivated junction

1500W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.05%

Excellent clamping capability

Low incremental surge resistance

Fast response time: typically less than 1.0ps from 0 Volts to

V^(BR)for uni-directional and 5.0ns for bi-directional types

For devices with V(BR) 10V,ID are typically less than 1.0μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 51bs. (2.3kg) tension

MECHANICAL DATA

Case:JEDEC DO-201AE, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Weight: 0.032 ounces, 0.9 grams

Mounting position: Any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

VALUE

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

Minimum 1500

SEE TABLE 1

I_PPM

Steady state pow er dissipation at T_L=75

ffffflead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

6.5

Peak forw ard surge current, 8.3ms single half

ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)

200.0

Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)

Typical thermal resistance junction-to-lead

V_F

R_θ_JL

3.5/5.0

Typical thermal resistance junction-to-ambient

R_θ_JA

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

www.galaxycn.com

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)200V, and V_F=5.0 Volt max. for devices of V_(BR)>200V

BLGALAXY ELECTRICAL

Document Number 0285011

12 3 4

中文翻译

下载PDF

与1N6274相关器件

型号	品牌	获取价格	描述	数据表
1N6274.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, D
1N6274/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6274/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6274/4-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
1N6274/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6274/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6274/4H-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6274/53-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6274/56-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6274/58-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

与1N6274相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6274

1N6274 数据手册

与1N6274相关器件

与1N6274相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6274

1N6274 数据手册

与1N6274相关器件

与1N6274相关文章

您还可以找

您在本页遇到什么问题？