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1N6273A PDF预览

1N6273A

更新时间： 2024-02-20 02:21:21
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
4页 215K
描述
1500 WattsTransient Voltage Suppressor Diodes

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中文翻译

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1N6273A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-201AE
包装说明：PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.46
其他特性：UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY最大击穿电压：13.2 V
最小击穿电压：10.8 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-201AE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：9.72 V表面贴装：NO
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

1N6273A 数据手册

 浏览型号1N6273A的Datasheet PDF文件第2页浏览型号1N6273A的Datasheet PDF文件第3页浏览型号1N6273A的Datasheet PDF文件第4页 
1.5KE SERIES  
1500 WattsTransient Voltage SuppressorDiodes  
DO-201AD/DO-27  
Features  
ꢀ
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
ꢀ
1500W surge capability at 10 x 1000 us  
waveform  
ꢀ
ꢀ
ꢀ
Excellent clamping capability  
Low Dynamic impedance  
Fast response time: Typically less than 1.0ps  
from 0 volts to VBR for unidirectional and 5.0 ns  
for bidirectional  
ꢀ
ꢀ
Typical IR less than 1uA above 10V  
High temperature soldering guaranteed:  
260oC / 10 seconds / .375”,(9.5mm) lead length  
/ 5lbs.,(2.3kg) tension  
Dimensions in inches and (millimeters)  
Mechanical Data  
ꢀ
Case: Molded plastic  
ꢀ
Polarity: Color band denotes cathode except  
bipolar  
ꢀ
Weight: 1.2 gram  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol  
Value  
Minimum1500  
Units  
Watts  
Peak Power Dissipation at TA=25oC, Tp=1ms (Note 1)  
PPK  
Steady State Power Dissipation at TL=75 oC  
Lead Lengths .375”, 9.5mm (Note 2)  
PD  
5.0  
Watts  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
(JEDEC method) (Note 3)  
IFSM  
200  
Amps  
Maximum Instantaneous Forward Voltage at 50.0A for  
Unidirectional Only (Note 4)  
VF  
3.5 / 5.0  
Volts  
oC  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to + 175  
Notes:  
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25oC Per Fig. 2.  
2. Mounted on Copper Pad Area of 0.6 x 0.6” (16 x 16 mm) Per Fig. 4.  
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes  
Maximum.  
≤
4. VF=3.5V for Devices of VBR 200V and VF=5.0V Max. for Devices VBR>200V.  
Devices for Bipolar Applications  
1. For Bidirectional Use C or CA Suffix for Types 1.5KE6.8 through Types 1.5KE440.  
2. Electrical Characteristics Apply in Both Directions.  
http://www.luguang.cn  
mail:lge@luguang.cn  
1234

中文翻译

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与1N6273A相关器件

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1N6273A/1 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon,
1N6273A/4E-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/4H VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6273A/4H-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/51-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/53-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/54-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/58-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6273A/62 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6273A/65 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, P

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