是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-XELF-N2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
Factory Lead Time: | 17 weeks | 风险等级: | 5.27 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED |
最小击穿电压: | 81.9 V | 击穿电压标称值: | 81.9 V |
外壳连接: | ISOLATED | 最大钳位电压: | 131.1 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-XELF-N2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 500 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | UNSPECIFIED | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 69.2 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | ZENER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6129USE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 69.2V V(RWM), Bidirectional, |
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1N6129USS | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N6129USV | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N6129USX | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N6129V | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N6129X | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N612A | NJSEMI |
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Rectifier Diode |
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1N613 | NJSEMI |
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Diode Switching 75V 0.3A 14-Pin CFPAK |
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1N6130 | STMICROELECTRONICS |
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600W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN |
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1N6130 | VMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 76V V(RWM), Bidirectional, 1 Element, Silicon, HERME |
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