是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | E-LALF-W2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.45 | Is Samacsys: | N |
最大击穿电压: | 105 V | 最小击穿电压: | 95 V |
击穿电压标称值: | 100 V | 外壳连接: | ISOLATED |
最大钳位电压: | 138 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | E-LALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ELLIPTICAL | 封装形式: | LONG FORM |
极性: | BIDIRECTIONAL | 最大重复峰值反向电压: | 76 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6130A.TR | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon |
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1N6130AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 500W, 76V V(RWM), Bidirectional, 1 Element, Silicon, ROHS |
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1N6130AS | SENSITRON |
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Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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1N6130AUS | SENSITRON |
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Transient Voltage Suppressor Diode, 500W |
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1N6130AUS | NJSEMI |
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Diode TVS Single Bi-Dir 76V 500W 2-Pin SMD |
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1N6130AUS | MICROSEMI |
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Trans Voltage Suppressor Diode, 500W, 76V V(RWM), Bidirectional, 1 Element, Silicon, HERME |
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1N6130AUS | SEMTECH |
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500W Bipolar Transient Voltage Suppressor Surface Mount (US) |
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1N6130AUSE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 76V V(RWM), Bidirectional, |
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1N6130AUSS | SENSITRON |
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暂无描述 |
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1N6130S | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, |
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