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1N6039ATR PDF预览

1N6039ATR

更新时间: 2024-11-20 13:02:07
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 111K
描述
Trans Voltage Suppressor Diode, 1500W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6039ATR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-13
包装说明:O-MALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.59
最大击穿电压:10.5 V最小击穿电压:9.5 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-202AAJESD-30 代码:O-MALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified最大重复峰值反向电压:8.5 V
表面贴装:NO技术:AVALANCHE
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6039ATR 数据手册

 浏览型号1N6039ATR的Datasheet PDF文件第2页 

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