1N60

更新时间： 2024-12-01 12:50:27

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管
页数	文件大小	规格书
2页	141K
描述
Small Signal Schottky Diodes

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中文翻译

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技术参数
数据手册

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1N60 技术参数

极性：	N Channel	Pd(W)：
V(BR)DS_min(V)：	600	ID_max(A)：	1.2
Rds_max(Ω）：	11.5	@VGS(V)：	10
VTH(GS)：	4	PACKAGE：	TO-220AB
class：	Transistors

1N60 数据手册

1N60

Small Signal Schottky Diodes

VOLTAGE RANGE: 40V

CURRENT: 0.03 A

DO - 35(GLASS)

Features

Metal sillicon junction majority carrier conduction

High current capability,low forward voltage drop

Extremely low reverse current I_R

Ultra speed switching characteristics

Small temperature coefficient of forward

characteristics

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Satisfactory wave detection efficiency

For use in RECORDER. TV. RADIO. TELEPHONE

as detectors,super high speed switching circuits,

small current rectifier

Dimensions in millimeters

Mechanical Data

Case:JEDEC DO--35,glass case

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Value

Parameters

Symbols

UNITS

1N60

Repetitive peak reverse voltage

Forw ard continuous current

V_RRM

I_F

40.0

30.0

T_A=25

Peak forw ard surge current (t=Is)

Storage and junction temperature range

I_FSM

T_STG/T_J

T_L

150.0

XX- 55 ---- + 150

230

Maximum lead temperature for soldering during 10s at 4mm from case

ELECTRICAL CHARACTERISTICS

Value

Parameters

Symbols

V_F

Test Conditions

UNITS

Min.

Typ.

Max.

0.5

I_F=1mA

I_F=30mA

1N60

0.32

Forward voltage

0.65

0.1

1.0

0.5

V_R=15V

Reverse current

Junction capacitance

I_R

V_R=1V f=1MHz

C_J

V =3V f=30MHz

60.0

Detection efficiency (See FIG. 4)

Reverse recovery time

C_L=10_PF R_L=3.8K

I =I_R=10mA t_rr=1mA ,R_L=100

t_rr

Thermal resistance,junction to ambient

400

R_θ

/ W

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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