Datasheet > 1N60

1N60

更新时间： 2024-12-01 02:54:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		小信号肖特基二极管
页数	文件大小	规格书
2页	51K
描述
SMALL SIGNAL SCHOTTKY DIODE

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中文翻译

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数据手册

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1N60 数据手册

GALAXY ELECTRICAL

1N60

VOLTAGE RANGE: 40V

SMALL SIGNAL SCHOTTKY DIODE

CURRENT: 0.03 A

FEATURES

Metal sillicon junction majority carrier conduction

High current capability,low forward voltage drop

Extremely low reverse current I_R

DO - 35(GLASS)

Ultra speed switching characteristics

Small temperature coefficient of forward

ffffff characteristics

Satisfactory wave detection efficiency

For use in RECORDER. TV. RADIO. TELEPHONE

as detectors,super high speed switching circuits,

small current rectifier

MECHANICAL DATA

Case:JEDEC DO--35,glass case

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Value

Parameters

Symbols

UNITS

1N60

Repetitive peak reverse voltage

V_RRM

I_F

40.0

30.0

Forw ard continuous current

T_A=25

Peak forw ard surge current (t=Is)

Storage and junction temperature range

I_FSM

T_STG/T_J

T_L

150.0

XX- 55 ---- + 150

230

Maximum lead temperature for soldering during 10s at 4mm from case

ELECTRICAL CHARACTERISTICS

Value

Parameters

Symbols

V_F

Test Conditions

UNITS

Min.

Typ.

Max.

0.5

I_F=1mA

I_F=30mA

1N60

0.32

Forward voltage

0.65

0.1

1.0

0.5

V_R=15V

Reverse current

Junction capacitance

I_R

V_R=1V f=1MHz

C_J

V =3V f=30MHz

60.0

Detection efficiency (See FIG. 4)

Reverse recovery time

C_L=10_PF R_L=3.8K

I =I_R=10mA t_rr=1mA ,R_L=100

t_rr

Thermal resistance,junction to ambient

400

R_θ

/ W

www.galaxycn.com

Document Number 0265003

BLGALAXY ELECTRICAL

中文翻译

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