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1N5932BRNG PDF预览

1N5932BRNG

更新时间： 2024-11-17 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管
页数 文件大小 规格书
7页 117K
描述
ZEN SUR30 REG 3W

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中文翻译

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1N5932BRNG 技术参数

是否无铅：不含铅生命周期：Active
包装说明：O-PALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50Factory Lead Time：2 weeks
风险等级：0.56Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-41JESD-30 代码：O-PALF-W2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：200 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1 W标称参考电压：20 V
表面贴装：NO技术：ZENER
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：5%工作测试电流：18.7 mA
Base Number Matches：1

1N5932BRNG 数据手册

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1N59xxBRNG Series  
3 W DO-41 Surmetict 30  
Zener Voltage Regulators  
This is a 1N59xxBRNG series with limits and excellent operating  
characteristics that reflect the superior capabilities of silicon−oxide  
passivated junctions. All this in an axial−lead, transfer−molded plastic  
package that offers protection in all common environmental  
conditions.  
http://onsemi.com  
Features  
Cathode  
Anode  
• Zener Voltage Range − 3.3 V to 200 V  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Surge Rating of 98 W @ 1 ms  
• Maximum Limits Guaranteed on up to Six Electrical Parameters  
• Package No Larger than the Conventional 1 W Package  
• This is a Pb−Free Device  
AXIAL LEAD  
CASE 59AB  
STYLE 1  
Mechanical Characteristics  
CASE: Void free, transfer−molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
260°C, 1/16″ from the case for 10 seconds  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
MARKING DIAGRAM  
A
1N  
MAXIMUM RATINGS  
59xxR  
YYWWG  
G
Rating  
Symbol  
Value  
Unit  
Max. Steady State Power Dissipation  
P
D
3.0  
W
A
= Assembly Location  
1N59xxR = Device Number  
@ T = 75°C, Lead Length = 3/8″  
L
Derate above 75°C  
24  
mW/°C  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
Steady State Power Dissipation  
P
D
1.0  
W
@ T = 50°C  
A
Derate above 50°C  
6.67  
mW/°C  
°C  
(Note: Microdot may be in either location)  
Operating and Storage  
Temperature Range  
T , T  
−65 to  
+200  
J
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
1N59xxBRNG  
Axial Lead  
(Pb−Free)  
3000 Units / Box  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 0  
1N5929BRN/D  
1234567

中文翻译

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1N5932BRNG 替代型号

型号 品牌 替代类型 描述 数据表
1N5932BRLG ONSEMI

完全替代

 3.0 W Zener Diode Voltage Regulator
BZX85C20 ONSEMI

类似代替

 20V、1W齐纳二极管

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1N5932B-T3-LF WTE

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1N5932BUR-1 MICROSEMI

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 		METALLURGICALLY BONDED GLASS SURFACE MOUNT 1.5 WATT ZENERS
1N5932BUR-1A MICROSEMI

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 		Zener Diode, 20V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5932BUR-1ATR MICROSEMI

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 		Zener Diode, 20V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5932BUR-1B MICROSEMI

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 		Zener Diode, 20V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLAS
1N5932BUR-1BTR MICROSEMI

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 		Zener Diode, 20V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLAS

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