是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-41 |
包装说明: | O-PALF-W2 | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-41 |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | 260 | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1 W | 认证状态: | COMMERCIAL |
标称参考电压: | 5.6 V | 表面贴装: | NO |
技术: | ZENER | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | 40 | 最大电压容差: | 5% |
工作测试电流: | 66.9 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5919B-T | MCC |
获取价格 |
Zener Diode, | |
1N5919B-TB | WTE |
获取价格 |
Zener Diode | |
1N5919BUR-1 | MICROSEMI |
获取价格 |
METALLURGICALLY BONDED GLASS SURFACE MOUNT 1.5 WATT ZENERS | |
1N5919BUR-1ATR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL | |
1N5919BUR-1B | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1BTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1C | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1CTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1D | MICROSEMI |
获取价格 |
暂无描述 | |
1N5919BUR-1DTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA |