是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AB |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.31 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED, HIGH RELIABILITY |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JEDEC-95代码: | DO-213AB | JESD-30 代码: | O-LELF-R2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.25 W |
认证状态: | Not Qualified | 标称参考电压: | 3.3 V |
表面贴装: | YES | 技术: | ZENER |
端子面层: | TIN LEAD | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 10% | 工作测试电流: | 113.6 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5913BUR-1ATR | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL | |
1N5913BUR-1B | MICROSEMI |
获取价格 |
暂无描述 | |
1N5913BUR-1BTR | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5913BUR-1C | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5913BUR-1CTR | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5913BUR-1D | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5913BUR-1DTR | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5913BUR-1E3 | MICROSEMI |
获取价格 |
Zener Diode | |
1N5913BUR-1TR | MICROSEMI |
获取价格 |
暂无描述 | |
1N5913C | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-41 |