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1N5820 PDF预览

1N5820

更新时间： 2024-02-10 08:42:57
品牌 Logo 应用领域
统懋 - MOSPEC 二极管
页数 文件大小 规格书
2页 127K
描述
Schottky Barrier Rectifiers

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1N5820 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.59Is Samacsys：N
其他特性：METALLURGICALLY BONDED应用：GENERAL PURPOSE
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
元件数量：1相数：1
端子数量：2最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM认证状态：Not Qualified
表面贴装：YES技术：SCHOTTKY
端子面层：TIN LEAD端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

1N5820 数据手册

 浏览型号1N5820的Datasheet PDF文件第2页 
MOSPEC  
1N5820M Thru 1N5822M  
Schottky Barrier Rectifiers  
SCHOTTKY BARRIER  
RECTIFIERS  
Using the Schottky Barrier principle with a Molybdenum barrier metal.  
These state-of-the-art geometry features epitaxial construction with oxide  
passivation and metal overlay contact. Ideally suited for low voltage, high  
frequency rectification, or as free wheeling and polarity protection diodes.  
3.0 AMPERES  
20-40 VOLTS  
Features  
＊Low Forward Voltage.  
＊Low Switching noise.  
＊High Current Capacity  
＊Guarantee Reverse Avalanche.  
＊Guard-Ring for Stress Protection.  
＊Low Power Loss & High efficiency.  
＊150℃ Operating Junction Temperature  
＊Low Stored Charge Majority Carrier Conduction.  
＊Plastic Material used Carries Underwriters Laboratory  
Flammability Classification 94V-O  
DO-201AD  
＊ESD: 8KV(Min.) Human-Body Model  
＊ In compliance with EU RoHs 2002/95/EC directives  
The marking is indicated by part no. with.“M” ex:1N5820M~1N5822M  
MAXIMUM RATINGS  
Characteristic  
Symbol 1N5820M 1N5821M 1N5822M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
40  
28  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
21  
V
A
Average Rectifier Forward Current  
3.0  
Non-Repetitive Peak Surge Current  
(Surge applied at rate load conditions  
half-wave, single phase,60Hz )  
MILLIMETERS  
IFSM  
DIM  
80  
A
MIN  
5.00  
25.40  
7.20  
1 20  
MAX  
5.60  
---  
A
B
C
D
Operating and Storage Junction  
Temperature Range  
℃
TJ , TSTG  
-65 to +150  
9.50  
1 30  
ELECTRIAL CHARACTERISTICS  
Characteristic  
Symbol 1N5820M 1N5821M 1N5822M Unit  
Maximum Instantaneous Forward Voltage  
(IF =3.0 Amp)  
(IF =9.0 Amp)  
0.475  
0.850  
0.550  
0.970  
VF  
V
CASE---  
Transfer molded  
plastic  
Maximum Instantaneous Reverse Current  
(Rated DC Voltage, TC = 25℃)  
(Rated DC Voltage, TC = 125℃)  
0.5  
20  
IR  
mA  
℃/w  
pF  
POLARITY---  
Cathode indicated  
polarity band  
Typical Thermal Resistance junction to case  
Rθ j-c  
CP  
40  
Typical Junction Capacitance  
(Reverse Voltage of 4 volts & f=1 MHz)  
210  
190  
12

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