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1N5699B PDF预览

1N5699B

更新时间: 2024-12-01 20:48:55
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 61K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 65V, Silicon, Abrupt, DO-7,

1N5699B 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.15
其他特性:SUPER Q最小击穿电压:65 V
外壳连接:ISOLATED配置:SINGLE
二极管电容容差:5%最小二极管电容比:2.8
标称二极管电容:12 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95代码:DO-7JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.4 W认证状态:Not Qualified
最小质量因数:400最大重复峰值反向电压:60 V
最大反向电流:2e-8 µA反向测试电压:60 V
子类别:Varactors表面贴装:NO
端子形式:WIRE端子位置:AXIAL
变容二极管分类:ABRUPTBase Number Matches:1

1N5699B 数据手册

  

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