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1N5617GP-E3/4G PDF预览

1N5617GP-E3/4G

更新时间: 2024-11-21 15:39:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 324K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

1N5617GP-E3/4G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1N5617GP-E3/4G 数据手册

 浏览型号1N5617GP-E3/4G的Datasheet PDF文件第2页浏览型号1N5617GP-E3/4G的Datasheet PDF文件第3页浏览型号1N5617GP-E3/4G的Datasheet PDF文件第4页 
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
200 V to 1000 V  
50 A  
150 ns, 250 ns, 300 ns, 500 ns  
IR  
0.5 µA  
1.2 V  
*
d
e
t
VF  
n
e
t
a
Tj max.  
175 °C  
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
1.0  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
A
Maximum DC blocking voltage  
VDC  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
IFSM  
50  
A
Operating junction and storage  
temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88522  
19-Sep-05  
www.vishay.com  
1

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