生命周期: | Active | 包装说明: | R-LELF-R2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.62 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | R-LELF-R2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | RECTANGULAR | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 标称参考电压: | 6.2 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子形式: | WRAP AROUND | 端子位置: | END |
最大电压容差: | 2% | 工作测试电流: | 1 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5525CUR-1TR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS | |
1N5525CURE3TR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL | |
1N5525CURTR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS | |
1N5525CURTR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5525D | NJSEMI |
获取价格 |
REF/REG DIODE | |
1N5525D | GOOD-ARK |
获取价格 |
0.4W LOW VOLTAGE AVALANCHE DIODES | |
1N5525D | MICROSEMI |
获取价格 |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | |
1N5525D | CENTRAL |
获取价格 |
6.2V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance | |
1N5525D-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5525D-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 6.2V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERME |