生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.05 |
Is Samacsys: | N | 其他特性: | HIGH Q |
最小击穿电压: | 30 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管电容容差: | 2% |
最小二极管电容比: | 2.7 | 标称二极管电容: | 6.8 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | JESD-30 代码: | O-LALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.4 W | 认证状态: | Not Qualified |
最小质量因数: | 600 | 最大重复峰值反向电压: | 30 V |
最大反向电流: | 2e-8 µA | 反向测试电压: | 25 V |
子类别: | Varactors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | AXIAL |
变容二极管分类: | ABRUPT | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5461CCHIP | APITECH |
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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, | |
1N5461CCO | AEROFLEX |
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6.8pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, DIE-1 | |
1N5461CO | AEROFLEX |
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Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DIE-1 | |
1N5461D | NJSEMI |
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Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 | |
1N5462 | AEROFLEX |
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8.2pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 | |
1N5462 | MICROSEMI |
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Variable Capacitance Diode, 8.2pF C(T), 30V, Silicon, Abrupt, DO-7, | |
1N5462 | KNOX |
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GENERAL PURPOSE ABRUPT VARACTOR DIODES | |
1N5462 | NJSEMI |
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Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7 | |
1N5462A | NJSEMI |
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D0-7 Diode | |
1N5462A | MICROSEMI |
获取价格 |
Variable Capacitance Diode, 8.2pF C(T), 30V, Silicon, Abrupt, DO-7 |