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1N5461C PDF预览

1N5461C

更新时间: 2024-11-21 20:42:19
品牌 Logo 应用领域
APITECH /
页数 文件大小 规格书
1页 59K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt,

1N5461C 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
Is Samacsys:N其他特性:HIGH Q
最小击穿电压:30 V外壳连接:ISOLATED
配置:SINGLE二极管电容容差:2%
最小二极管电容比:2.7标称二极管电容:6.8 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.4 W认证状态:Not Qualified
最小质量因数:600最大重复峰值反向电压:30 V
最大反向电流:2e-8 µA反向测试电压:25 V
子类别:Varactors表面贴装:NO
端子形式:WIRE端子位置:AXIAL
变容二极管分类:ABRUPTBase Number Matches:1

1N5461C 数据手册

  

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