Datasheet > 1N5408G

1N5408G

更新时间： 2024-09-27 06:22:11

品牌	Logo	应用领域
SYNSEMI		二极管 PC
页数	文件大小	规格书
2页	32K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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1N5408G 数据手册

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

1N5400G - 1N5408G

PRV : 50 - 1000 Volts

Io : 3.0 Amperes

DO - 201AD

FEATURES :

1.00 (25.4)

* Glass passivated chip

* High current capability

* High reliability

0.21 (5.33)

MIN.

0.19 (4.83)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.375 (9.53)

0.285 (7.24)

1.00 (25.4)

MECHANICAL DATA :

0.052 (1.32)

MIN.

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.048 (1.22)

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 1.16 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT

VRRM

VRMS

VDC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 75 °C

Peak Forward Surge Current

IF(AV)

3.0

IFSM

150

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 3.0 Amps.

1.0

5.0

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 °C

IR(H)

Ta = 100 °C

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

R_qJA

°C/W

°C

- 65 to + 175

TSTG

Storage Temperature Range

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 02 : March 31, 2005

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1N5408GH31-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
1N5408GH32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
1N5408GH35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
1N5408GH36-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
1N5408GH36-4	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,