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1N5408GP PDF预览

1N5408GP

更新时间: 2024-02-23 07:24:43
品牌 Logo 应用领域
商朗 - LUNSURE 整流二极管
页数 文件大小 规格书
3页 44K
描述
3 Amp Glass Passivated Rectifier 50-1000 Volts

1N5408GP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.09
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5408GP 数据手册

 浏览型号1N5408GP的Datasheet PDF文件第2页浏览型号1N5408GP的Datasheet PDF文件第3页 
1N5400GP  
THRU  
1N5408GP  
Shanghai Lunsure Electronic  
Technology Co.,Ltd  
Tel:0086-21-37185008  
Fax:0086-21-57152769  
Features  
·
·
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
3 Amp Glass  
Passivated Rectifier  
50 - 1000 Volts  
Low Forward Voltage  
High Current Capability  
Glass Passivated Junction  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
Catalog  
Number  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5400GP  
1N5401GP  
1N5402GP  
1N5404GP  
1N5406GP  
1N5407GP  
1N5408GP  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
---  
---  
1.20  
25.40  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 3.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.cnelectr .com  

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