5秒后页面跳转
1N5403 PDF预览

1N5403

更新时间: 2024-01-12 07:12:57
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
2页 35K
描述
PLASTIC SILICON RECTIFIERS

1N5403 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.91JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

1N5403 数据手册

 浏览型号1N5403的Datasheet PDF文件第2页 
1N5400 thru 1N5408  
REVERSE VOLTAGE - 50 to 1000 Volts  
FORWARD CURRENT - 3.0 Amperes  
PLASTIC SILICON RECTIFIERS  
DO- 27  
FEATURES  
Low cost  
Diffused junction  
.052(1.3)  
.048(1.2)  
Low forward voltage drop  
Low reverse leakage current  
DIA.  
1.0(25.4)  
MI  
High current capability  
The plastic material carries UL recognition 94V-0  
210  
.375(9.5)  
.335(8.5)  
.220(5.6)  
.197(5.0)  
DIA.  
MECHANICAL DATA  
Case: JEDEC DO-27 molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.04 ounces , 1.1grams  
Mounting position: Any  
1.0(25.4)  
MI  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5403  
1N  
5404  
1N  
5405  
1N  
5406  
1N  
5407  
1N  
5408  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
70  
700  
Maximum DC Blocking Voltage  
Maximum Average Forward  
100  
1000  
I(AV)  
3.0  
A
Rectified Current  
@TA =55  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Supe Imposed on Rated Load(JEDEC Method)  
IFSM  
200  
1.2  
A
Maximum Forward Voltage at 3.0A DC  
VF  
IR  
V
5.0  
50  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@TJ=25℃  
@TJ=100℃  
uA  
50  
35  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
Storage Temperature Range  
CJ  
RθJA  
TJ  
pF  
/W  
15  
-55 to +125  
-55 to +150  
TSTG  
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC  
2.Thermal resistance junction of ambient.  
~ 15 ~  

与1N5403相关器件

型号 品牌 获取价格 描述 数据表
1N5403/100 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5403/4E VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5403/4F-E3 VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5403/4H-E3 VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5403/51 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5403/54 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5403/56 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5403/58-E3 VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5403/60-E3 VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5403/62 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2