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1N5392G PDF预览

1N5392G

更新时间: 2024-10-30 20:26:59
品牌 Logo 应用领域
扬杰 - YANGJIE 二极管
页数 文件大小 规格书
4页 471K
描述
Rectifier Diode,

1N5392G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:2.5 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5392G 数据手册

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RoHS  
1N5391G THRU 1N5399G  
General Purpose Rectifier  
COMPLIANT  
Features  
High efficiency  
High current capability  
High reliability  
High surge current capability  
Low power loss  
Glass passivated chip junction  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Mechanical Data  
ackage: DO-204AC(DO-15)  
P
Molding compound meets UL 94 V-0 flammability rating,  
RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
Maximum Ratings  
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
PARAMETER  
SYMBOL UNIT  
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
Device marking code  
VRRM  
V
A
50  
100  
200  
400  
1.5  
600  
800  
1000  
Repetitive Peak Reverse Voltage  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta =50  
IF(AV)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
A
50  
T
-55 ~+150  
-55~+150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
VFM  
IFM=1.5A  
V
1.1  
IRRM1  
IRRM2  
T =25℃  
2.5  
50  
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
μA  
T =100℃  
a
Measured at 1MHZ  
and Applied Reverse  
Voltage of 4.0 V.D.C.  
Typicaljunctioncapacitance  
Cj  
pF  
15  
Thermal Characteristics T =25Unless otherwise specified)  
a
1N5391G  
1N5392G  
1N5393G  
1N5395G  
1N5397G  
1N5398G  
1N5399G  
PARAMETER  
SYMBOL  
UNIT  
Rθ  
Thermal Resistance(Typical)  
/W  
50  
J-A  
1 / 4  
S-A025  
Rev.2.1,28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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