1N5387CTR

更新时间： 2024-11-14 22:52:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管测试
页数	文件大小	规格书
3页	214K
描述
Silicon 5 Watt Zener Diodes

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5387CTR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	PLASTIC, T-18, 2 PIN
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.76	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	5 W
标称参考电压：	190 V	表面贴装：	NO
技术：	ZENER	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	2%
工作测试电流：	5 mA	Base Number Matches：	1

1N5387CTR 数据手册

1N5333B thru 1N5388B

Silicon 5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt

Zeners provides voltage regulation in a selection from 3.3 to 200 volts with

different tolerances as identified by specific suffix letter on the part number.

These plastic encapsulated Zeners have moisture classification of Level 1

with no dry pack required and are also available in various military

equivalent screening levels by adding a prefix identifier as also described in

the Features section. They may be operated at high maximum dc currents

with adequate heat sinking with their comparatively low thermal resistance

design. Microsemi also offers numerous other Zener products to meet

higher and lower power applications.

T-18

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N5333 to 1N5388B

Zener voltage available 3.3V to 200V

• Regulates voltage over a broad operating current and

temperature range

• Wide selection from 3.3 to 200 V

Standard voltage tolerances are plus/minus 5%

with B suffix and 10 % with A suffix identification

• Flexible axial-lead mounting terminals

• Nonsensitive to ESD per MIL-STD-750 Method 1020

• Withstands high surge stresses

•

Tight tolerances available in plus or minus 2% or

1% with C or D suffix respectively

Options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, and

JANS are available by adding MQ, MX, MV, or

MSP prefixes respectively to part numbers.

Surface mount equivalents available as

SMBJ5333 to SMBJ5388B, or SMBG5333B to

SMBG5388B

• Minimal changes of voltage versus current as

specified by voltage regulation (∆V_Z)

• High specified maximum current (I_ZM) when

adequately heat sunk

•

• Moisture classification is Level 1 per IPC/JEDEC J-

STD-020B with no dry pack required

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 5.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

+150^ºC

TERMINALS: Leads, tin-lead plated solderable per

MIL-STD-750, method 2026

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end.

Thermal Resistance: 25 ^ºC/W junction to lead at

3/8 (10 mm) lead length from body, or 85^ºC/W

junction to ambient when mounted on FR4 PC

board (1oz Cu) with 4 mm²copper pads and

track width 1 mm, length 25 mm

•

MARKING: Part number

TAPE & REEL option: Standard per EIA-296 (add

•

Steady-State Power: 5 watts at T_L< 25^oC 3/8

inch (10 mm) from body, or 1.47 watts at T_A=

25^ºC when mounted on FR4 PC described for

thermal resistance (also see Figure 1)

“TR” suffix to part number)

•

WEIGHT: 0.7 grams

See package dimensions on last page

•

Forward voltage @1.0 A: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

Microsemi

Page 1

7-23-2003 REV B

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N5387CTR相关器件

型号	品牌	获取价格	描述	数据表
1N5387D	MICROSEMI	获取价格	Silicon 5 Watt Zener Diodes
1N5387D	MOTOROLA	获取价格	Zener Diode, 190V V(Z), 1%, 5W,
1N5387D	NJSEMI	获取价格	Diode Zener Single 190V 1% 5W 2-Pin Case T-18
1N5387D/TR8	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 1%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
1N5387DE3	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 1%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387DE3/TR	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 1%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387DE3/TR8	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 1%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387DE3TR	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 1%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387DTR	MICROSEMI	获取价格	Silicon 5 Watt Zener Diodes
1N5387E3/TR	MICROSEMI	获取价格	Zener Diode, 190V V(Z), 20%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2

与1N5387CTR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

8
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5387CTR

1N5387CTR 技术参数

1N5387CTR 数据手册

与1N5387CTR相关器件

与1N5387CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5387CTR

1N5387CTR 技术参数

1N5387CTR 数据手册

与1N5387CTR相关器件

与1N5387CTR相关文章

您还可以找

您在本页遇到什么问题？