5秒后页面跳转
1N5387B PDF预览

1N5387B

更新时间: 2024-11-14 22:38:03
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管
页数 文件大小 规格书
4页 306K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)

1N5387B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AE
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.67
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-201AE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified标称参考电压:190 V
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:5 mA
Base Number Matches:1

1N5387B 数据手册

 浏览型号1N5387B的Datasheet PDF文件第2页浏览型号1N5387B的Datasheet PDF文件第3页浏览型号1N5387B的Datasheet PDF文件第4页 
P a r t N u mb e r : 1 N 5 3 4 8 B ~ 1 N 5 3 8 8 B  
Approve Sheet  
DATA SHEET  
1N5 3 4 8 B~ 1N5 3 8 8 B  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE  
VOLTAGE- 11 to 200 Volts Power - 5.0 Watts  
Unit: inch ( mm )  
DO-201AE  
FEATURES  
(
.042 1.07  
)
(
.037 .94  
)
• Low profile package  
• Built-in strain relief  
• Glass passivated junction  
• Low inductance  
• Typical IR less than 5.0µA above 11V  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
• High temperature soldering : 260°C /10 seconds at terminals  
MECHANICALDATA  
Case: JEDEC DO-201AE, Molded plastic over passivated junction  
Terminals: solder platble,solderable per MIL-STD-750,Method 2026  
(
.210 5.3  
)
)
(
.188 4.8  
Standard Packing: 52mm tape  
Weight: 0.04 ounce, 1.1 gram  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VALUE  
UNITS  
Watts  
5.0  
DC Power Dissipation on TL=75°C ,Measure at Zero Lead Length  
Derate above 75°C ( NOTE 1)  
PD  
mW / °C  
40.0  
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
See Fig. 5  
Amps  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
NOTES:  
1.Mounted on 8.0mm2 copper pads to each terminal.  
2.8.3ms single half sine-wave ,or equivalent square wave ,duty cycle=4 pulses per minute maximum.  
P AGE . 1  

与1N5387B相关器件

型号 品牌 获取价格 描述 数据表
1N5387B(190V) ETC

获取价格

Zener Diodes
1N5387B-B DIODES

获取价格

Zener Diode, 190V V(Z), 5%, 5W, Silicon, Unidirectional
1N5387BBK CENTRAL

获取价格

Zener Diode, 190V V(Z), 5W, Silicon, Unidirectional
1N5387BBKLEADFREE CENTRAL

获取价格

Zener Diode, 190V V(Z), 5W, Silicon, Unidirectional
1N5387BE MCC

获取价格

5 Watt Zener Diode 11 to 200 Volts
1N5387BE3/TR13 MICROSEMI

获取价格

Zener Diode
1N5387BE3/TR7 MICROSEMI

获取价格

Zener Diode
1N5387BE3/TR8 MICROSEMI

获取价格

Zener Diode, 190V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387BE3TR MICROSEMI

获取价格

Zener Diode, 190V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2
1N5387BEB MCC

获取价格

Zener Diode, 190V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE, PLASTIC PACKAGE-2