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1N5386C PDF预览

1N5386C

更新时间: 2024-11-14 22:52:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管测试
页数 文件大小 规格书
3页 214K
描述
Silicon 5 Watt Zener Diodes

1N5386C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.2
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
标称参考电压:180 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2%工作测试电流:5 mA
Base Number Matches:1

1N5386C 数据手册

 浏览型号1N5386C的Datasheet PDF文件第2页浏览型号1N5386C的Datasheet PDF文件第3页 
1N5333B thru 1N5388B  
Silicon 5 Watt Zener Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt  
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with  
different tolerances as identified by specific suffix letter on the part number.  
These plastic encapsulated Zeners have moisture classification of Level 1  
with no dry pack required and are also available in various military  
equivalent screening levels by adding a prefix identifier as also described in  
the Features section. They may be operated at high maximum dc currents  
with adequate heat sinking with their comparatively low thermal resistance  
design. Microsemi also offers numerous other Zener products to meet  
higher and lower power applications.  
T-18  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
JEDEC registered 1N5333 to 1N5388B  
Zener voltage available 3.3V to 200V  
Regulates voltage over a broad operating current and  
temperature range  
Wide selection from 3.3 to 200 V  
Standard voltage tolerances are plus/minus 5%  
with B suffix and 10 % with A suffix identification  
Flexible axial-lead mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method 1020  
Withstands high surge stresses  
Tight tolerances available in plus or minus 2% or  
1% with C or D suffix respectively  
Options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, JANTXV, and  
JANS are available by adding MQ, MX, MV, or  
MSP prefixes respectively to part numbers.  
Surface mount equivalents available as  
SMBJ5333 to SMBJ5388B, or SMBG5333B to  
SMBG5388B  
Minimal changes of voltage versus current as  
specified by voltage regulation (VZ)  
High specified maximum current (IZM) when  
adequately heat sunk  
Moisture classification is Level 1 per IPC/JEDEC J-  
STD-020B with no dry pack required  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Power dissipation at 25ºC: 5.0 watts (also see  
derating in Figure 1).  
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
Operating and Storage temperature: -65ºC to  
+150ºC  
TERMINALS: Leads, tin-lead plated solderable per  
MIL-STD-750, method 2026  
POLARITY: Cathode indicated by band. Diode to  
be operated with the banded end positive with  
respect to the opposite end.  
Thermal Resistance: 25 ºC/W junction to lead at  
3/8 (10 mm) lead length from body, or 85ºC/W  
junction to ambient when mounted on FR4 PC  
board (1oz Cu) with 4 mm2 copper pads and  
track width 1 mm, length 25 mm  
MARKING: Part number  
TAPE & REEL option: Standard per EIA-296 (add  
Steady-State Power: 5 watts at TL < 25oC 3/8  
inch (10 mm) from body, or 1.47 watts at TA =  
25ºC when mounted on FR4 PC described for  
thermal resistance (also see Figure 1)  
“TR” suffix to part number)  
WEIGHT: 0.7 grams  
See package dimensions on last page  
Forward voltage @1.0 A: 1.2 volts (maximum)  
Solder Temperatures: 260 ºC for 10 s (max)  
Copyright 2003  
Microsemi  
Page 1  
7-23-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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