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1N5379B PDF预览

1N5379B

更新时间: 2024-11-05 22:38:03
品牌 Logo 应用领域
TRSYS 稳压二极管测试
页数 文件大小 规格书
5页 270K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

1N5379B 数据手册

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1N5348B THRU 1N5388B  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE  
VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts  
DO-201AE  
FEATURES  
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Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Typical ID less than 1 A above 13V  
High temperature soldering :  
260 /10 seconds at terminals  
Plastic package has Underwriters Laboratory  
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Flammability Classification 94V-O  
MECHANICAL DATA  
Case: JEDEC DO-201AE Molded plastic over passivated junction  
Terminals: Solder plated, solderable per MIL-STD-750,  
method 2026  
Standard Packaging: 52mm tape  
Weight: 0.04 ounce, 1.1 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PD  
VALUE  
5.0  
40.0  
UNITS  
Watts  
mW/  
DC Power Dissipation @ TL=75 , Measure at Zero Lead Length(Fig. 1)  
Derate above 75 (Note 1)  
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated  
load(JEDEC Method) (Note 1,2)  
IFSM  
See Fig. 5  
Amps  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
NOTES:  
1. Mounted on 8.0mm2 copper pads to each terminal.  
2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.  

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