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1N5333B PDF预览

1N5333B

更新时间: 2024-10-30 20:22:07
品牌 Logo 应用领域
鲁光 - LGE 测试二极管
页数 文件大小 规格书
5页 3262K
描述
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1N5333B 技术参数

Case Style:DO-15Pd(W):5
VZ(Min):-VZ(Nom):3.3
VZ(Max):-IZT(mA):380
IR(uA):300VR(V):1.0
class:Diodes

1N5333B 数据手册

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1N5333B-1N5388B  
Zener Diode  
POWER DISSIPATION: 5.0 W  
DO-15  
Features  
Silicon planar power zener diodes  
For use in stabilizing and clipping curcuits with high  
power rating.  
Standard zener voltage tolerance is ±10%. Add  
suffix"B" for ±5% tolerance. other zener voltage  
and tolerances are available upon request.  
Mechanical Data  
Case:DO-15  
Dimensions in inches and (millimeters)  
Polarity: cathode Band  
Marking: type number  
Approx. weight: 0.40grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
Zener current (see Table "Characteristics")  
DC pow er dissipation @ TL=75, measure at zero lead length (Fig.1)  
derate above 75 (NOTE1)  
5.0  
40.0  
W
mW  
PD  
Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated  
IFSM  
see fig.5  
-55---+150  
-55---+150  
A
load (JEDEC Method)(NOTE1,2)  
Junction temperature  
TJ  
Ts  
Storage temperature range  
NOTES: (1) Mounted on 8.0mm2 copper pads to each terminal.  
(2) 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minute maximum.  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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