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1N5264B-TR PDF预览

1N5264B-TR

更新时间: 2024-12-01 13:03:39
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
3页 77K
描述
Zener Diode, 60V V(Z), 5%, 0.5W,

1N5264B-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:7.08二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e2端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5264B-TR 数据手册

 浏览型号1N5264B-TR的Datasheet PDF文件第2页浏览型号1N5264B-TR的Datasheet PDF文件第3页 
1N5225 THRU 1N5267  
ZENER DIODES  
FEATURES  
Silicon Planar Power Zener Diodes  
DO-35  
Standard Zener voltage tolerance is ± 5%  
with a “B” suffix. Other tolerances are  
available upon request.  
max. .079 (2.0)  
These diodes are also available in Mini-MELF case with  
the type designation ZMM5225 ... ZMM5267, SOT-23  
case with the type designation MMBZ5265 ... MMBZ5267  
and SOD-23 case with the types designation MMSZ5225 ...  
MMSZ5267.  
Cathode  
Mark  
max. .020 (0.52)  
MECHANICAL DATA  
Case: DO-35 Glass Case  
Dimensions are in inches and (millimeters)  
Weight: approx. 0.13 g  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
Zener Current (see Table “Characteristics”)  
Power Dissipation at T  
= 75°C  
P
500(1)  
175  
mW  
°C  
amb  
tot  
Maximum Junction Temperature  
Storage Temperature Range  
T
j
T
– 65 to +175  
°C  
S
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Thermal Resistance  
Junction to Ambient Air  
R
300(1)  
°C/W  
Volts  
ΘJA  
Forward Voltage  
V
1.1  
F
at I = 200 mA  
F
NOTES:  
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
1/21/99  

1N5264B-TR 替代型号

型号 品牌 替代类型 描述 数据表
1N5264B-TAP VISHAY

完全替代

暂无描述
1N5263 EIC

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