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1N5261B PDF预览

1N5261B

更新时间: 2024-11-30 12:50:39
品牌 Logo 应用领域
鲁光 - LGE 稳压二极管齐纳二极管
页数 文件大小 规格书
3页 212K
描述
Zener Diodes

1N5261B 技术参数

Case Style:DO-35Pd(W):0.5
VZ(Min):-VZ(Nom):47
VZ(Max):-IZT(mA):2.7
IR(uA):0.1VR(V):36
class:Diodes

1N5261B 数据手册

 浏览型号1N5261B的Datasheet PDF文件第2页浏览型号1N5261B的Datasheet PDF文件第3页 
1N5221B-1N5279B  
Zener Diodes  
POWER DISSIPATION: 500 mW  
DO-35(GLASS)  
Features  
Silicon planar power zener diodes  
Standard Zener voltage tolerance is ±5%. With a "B"  
suffix. Other tolerances are available upon request.  
Mechanical Data  
Case:DO-35, Glass Case  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Dimensions in millimeters  
Marking: Type Number  
Approx. Weight: 0.13 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
mW  
Zener current (see Table "Characteristics")  
5001)  
175  
Ptot  
TJ  
Power dissipation at Tamb=25  
Junction temperature  
Ts  
-55---+175  
Storage temperature range  
SYMBOL  
RθJA  
MIN  
TYP  
MAX  
3001)  
1.2  
UNIT  
/W  
Thermal resistance junction to ambient  
Forw ard voltage at IF=200mA  
V
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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