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1N5261B PDF预览

1N5261B

更新时间: 2024-11-30 07:22:07
品牌 Logo 应用领域
TGS 稳压二极管
页数 文件大小 规格书
3页 178K
描述
Zener diode

1N5261B 数据手册

 浏览型号1N5261B的Datasheet PDF文件第2页浏览型号1N5261B的Datasheet PDF文件第3页 
TIGER ELECTRONIC CO.,LTD  
1N5221B~1N5267B  
Zener diode  
Features  
1. High reliability  
2. Very sharp reverse characteristic  
3. Low reverse current level  
4. VZ-tolerance±5%  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
Tj=25℃  
Parameter  
Power dissipation  
Test Conditions  
amb75℃  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
T
PV  
IZ  
Z-current  
PV/VZ  
Junction temperature  
Storage temperature range  
Tj  
200  
Tstg  
-65~+200  
Maximum Thermal Resistance  
Tj=25℃  
Parameter  
Test Conditions  
I=9.5mm(3/8”) TL=constant  
Symbol  
RthJA  
Value  
300  
Unit  
K/W  
Junction ambient  
Electrical Characteristics  
Tj=25℃  
Parameter  
Test Conditions  
IF=200mA  
Type  
Symbol Min  
VF  
Typ Max Unit  
Forward voltage  
1.1  
V
1/3  

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