Datasheet > 1N5260D-T

1N5260D-T

更新时间： 2024-11-28 02:59:39

品牌	Logo	应用领域
RECTRON		测试二极管
页数	文件大小	规格书
6页	114K
描述
Zener Diode

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中文翻译

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数据手册

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1N5260D-T 数据手册

1N5221B-

1N5267B

SILICON ZENER DIODES

VOLTAGE 2.4 To 75 Volts POWER 500 mWatts

FEATURES

DO-35

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: Molded Glass DO-35

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.13 grams

• Mounting Position: Any

• Ordering information: Suffix : “ -35 ” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 13" plastic Reel

T/B - 5K per horiz. tape & Ammo box

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Value

500

Units

Power Dissipation at Tamb = 25 ^OC

TO T

Junction Temperature

175

^OC

Storage Temperature Range

-65 to +175

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Parameter

Symbol

R_QJA

Min.

Typ.

Max.

0.3*

Units

Thermal Resistance Junction to Ambient Air

K/mW

Forward Voltage at I_F= 200mA

1.1

V_F

Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

2015-09

REV: O

12 3 4 5 6

中文翻译

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