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1N5232SB-A PDF预览

1N5232SB-A

更新时间: 2024-11-28 13:03:35
品牌 Logo 应用领域
美台 - DIODES 稳压二极管测试
页数 文件大小 规格书
2页 36K
描述
Zener Diode, 5.6V V(Z), 5%, 0.5W, Silicon, Unidirectional

1N5232SB-A 技术参数

生命周期:Obsolete包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.56
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-XALF-W2膝阻抗最大值:1600 Ω
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:5.6 V最大反向电流:5 µA
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
电压温度Coeff-Max:2.128 mV/ °C最大电压容差:5%
工作测试电流:20 mABase Number Matches:1

1N5232SB-A 数据手册

 浏览型号1N5232SB-A的Datasheet PDF文件第2页 
1N5221B - 1N5267B  
500mW EPITAXIAL ZENER DIODE  
Features  
·
·
·
·
·
·
500mW Power Dissipation  
High Stability  
Low Noise  
Surface Mount Equivalents Available  
Hermetic Package  
VZ - Tolerance ±5%  
A
B
A
C
D
Mechanical Data  
DO-35  
·
Case: DO-35, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approx.)  
Dim  
A
Min  
25.40  
¾
Max  
¾
·
B
4.00  
0.60  
2.00  
·
·
·
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C/W  
V
RqJA  
300  
Forward Voltage  
@ IF = 200mA  
VF  
1.1  
Tj, TSTG  
°C  
Operating and Storage Temperature Range  
-65 to +200  
Notes:  
1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
DS18006 Rev. 14 - 2  
1 of 2  
1N5221B - 1N5267B  

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