1N5061GPE

更新时间： 2024-01-23 02:04:22

品牌	Logo	应用领域
威世 - VISHAY		二极管测试
页数	文件大小	规格书
2页	55K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AP

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技术参数
数据手册

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1N5061GPE 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-609代码：	e0
最大非重复峰值正向电流：	50 A	元件数量：	1
最高工作温度：	150 °C	最大输出电流：	2 A
最大重复峰值反向电压：	600 V	子类别：	Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn80Pb20)

1N5061GPE 数据手册

RATINGS AND CHARACTERISTIC CURVES 1N5059 THRU 1N5062

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

FIG. 1 - FORWARD CURRENT

DERATING CURVE

1.0

0.8

0.6

0.4

0.2

T =T max.

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

60H

RESISTIVE

INDUCTIVE LOAD

0.375" (9.5mm)

LEAD LENGTH

100 125 150 175

100

AMBIENT TEMPERATURE, °C

NUMBER OF CYCLES AT 60 H_Z

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

T =125°C

PULSE WIDTH=300µs

T =150°C

1% DUTY CYCLE

T =75°C

0.1

T =25°C

0.1

T =25°C

0.01

100

PERCENT OF RATED PEAK REVERSE VOLTAGE, %

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 6 - MAXIMUM NON-REPETITIVE

PEAK PULSE REVERSE

AVALANCHE POWER DISSIPATION

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

1,000

T =25°C

f =1.0 MHz

Vsig=50mVp-p

100

10,000

1,000

t_d, PULSE DURATION, MICROSECONDS

100

REVERSE VOLTAGE, VOLTS

100

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