5秒后页面跳转
1N5062 PDF预览

1N5062

更新时间: 2024-01-13 06:25:38
品牌 Logo 应用领域
鲁光 - LGE 二极管IOT
页数 文件大小 规格书
2页 219K
描述
Plastic Silicon Rectifier

1N5062 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.55其他特性:PATENTED DEVICE, METALLURGICALLY BONDED
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AP
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:4 µs表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5062 数据手册

 浏览型号1N5062的Datasheet PDF文件第2页 
1N5059-1N5062  
Plastic Silicon Rectifier  
VOLTAGE RANGE: 200---800 V  
CURRENT: 2.0 A  
Features  
DO - 15  
Low cost  
Diffused junction  
Glass passivated chips  
Low forward voltage drop  
High crrent capability  
Easily cleaned with Freon,Alcohol, lsopropand  
and similar solvents  
Mechanical Data  
Case: JEDEC DO-15, molded plastic  
Terminals: Axial leads,solderable per MIL-STD  
-202,Method 208  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces, 0.39grams  
Mounting: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
1N5059  
1N5060  
1N5061  
1N5062  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
V
V
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
A
2.0  
IF(AV)  
9.5mm lead length, @TA=50  
Peak forw ard surge current  
10ms single half-sine-w ave  
50.0  
1.2  
1.15  
5.0  
A
IFSM  
superimposed on rated load  
@TJ=125  
@1.0A  
@ 2.5A  
Maximum instantaneous  
VF  
IR  
V
forw ard voltage  
Maximum reverse current  
@TA=25  
A
at rated DC blocking voltage @TA=150  
100  
4.0  
40  
Maximum reverse recovery time  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
trr  
CJ  
µ s  
(Note2)  
(Note3)  
pF  
45  
RθJA  
TJ  
K/W  
Operating junction temperature range  
- 55 ----- + 175  
- 55 ----- + 175  
Storage temperature range  
TSTG  
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MH and applied rev erse v oltage of 0V DC.  
3. Thermal resistance from junction to ambient.  
Z
http://www.luguang.cn  
mail:lge@luguang.cn  

与1N5062相关器件

型号 品牌 获取价格 描述 数据表
1N5062GP VISHAY

获取价格

GLASS PASSIVATED JUNCTION RECTIFIER
1N5062GP NJSEMI

获取价格

Diode Switching 800V 1A 2-Pin DO-15
1N5062GP/100 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5062GP/23 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5062GP/4E VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5062GP/4E-E3 VISHAY

获取价格

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5062GP/4F VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5062GP/4F-E3 VISHAY

获取价格

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5062GP/4G-E3 VISHAY

获取价格

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5062GP/4H VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN