Datasheet > 1N4987

1N4987

更新时间： 2024-11-09 20:22:47

品牌	Logo	应用领域
EIC		测试二极管
页数	文件大小	规格书
2页	114K
描述
Zener Diode,

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中文翻译

获取价格

技术参数
数据手册

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1N4987 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.66	Is Samacsys：	N
Base Number Matches：	1

1N4987 数据手册

TH97/10561QM

TW00/17276EM

IATF 0060636

SGS TH07/1033

SILICON ZENER DIODE

1N4954 ~ 1N4989

DO-15

VZ : 6.8 - 200 Volts

P^D: 5 Watts

FEATURES :

1.00 (25.4)

MIN.

0.140 (3.6)

0.104 (2.6)

* Glass passivated junction chip

* High peak reverse power dissipation

* High reliability

0.300 (7.6)

0.230 (5.8)

* Low leakage current

* Pb Free/RoHS Compliant

1.00 (25.4)

MIN.

MECHANICAL DATA :

0.034 (0.86)

0.028 (0.71)

* Case : DO-15 Molded plastic

* Epoxy : UL94V-0 rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.4 gram

MAXIMUM RATINGS

Rating at25 °C ambient temperature unless otherwise specified.

Rating

DC Power Dissipation

Symbol

Value

5.0

Unit

V_F

Maximum Forward Voltage at IF = 1 A

Thermal Resistance Junction to Lead (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

1.5

R_ӨJL

°C/W

°C

- 65 to + 175

T_STG

°C

Note :

(1) At 3/8 inch (10 mm) from body

FIG. - 1 POWER DERATING CURVE

L = 3/8"

L = Lead Length from Body

100

125

150

175

LEAD TEMPERATURE , (°C)

Page 1 of 2

Rev. 01 : October 28, 2008

中文翻译

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