Datasheet > 1N4947GP-HE3/73

1N4947GP-HE3/73

更新时间： 2024-11-21 10:47:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	72K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

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1N4947GP-HE3/73 数据手册

1N4942GP thru 1N4948GP

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

SUPERECTIFIER^®

DO-204AL (DO-41)

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

I_FSM

t_rr

200 V to 1000 V

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

25 A

150 ns, 250 ns, 500 ns

1.0 μA

I_R

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

V_F

1.3 V

T_Jmax.

175 °C

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

I_FSM

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

°C

Document Number: 88511

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与1N4947GP-HE3/73相关器件

型号	品牌	获取价格	描述	数据表
1N4947GP-TP-HF	MCC	获取价格	暂无描述
1N4947G-T	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4947H02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H03-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H03-4	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H04	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H08	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947H09	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41
1N4947M01	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41

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