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1N4935GPE/51 PDF预览

1N4935GPE/51

更新时间： 2024-11-24 19:46:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4935GPE/51 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：PLASTIC, DO-41, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.42Is Samacsys：N
其他特性：PATENTED DEVICE, METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e0
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：200 V最大反向恢复时间：0.2 µs
表面贴装：NO端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N4935GPE/51 数据手册

 浏览型号1N4935GPE/51的Datasheet PDF文件第2页 
1N4933GP thru 1N4937GP  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Junction  
Fast Switching Rectifier  
Reverse Voltage 50 to 600V  
Forward Current 1.0A  
DO-204AL (DO-41)  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High temperature metallurgically bonded construction  
• Capable of meeting environmental standards of  
MIL-S-19500  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• For use in high frequency rectifier circuits  
• Fast switching for high efficiency  
• Cavity-free glass passivated junction  
• 1.0 Ampere operation at TA=75°C with no thernal runaway  
• Typical IR less than 0.1µA  
0.205 (5.2)  
0.160 (4.1)  
• High temperature soldering guaranteed:  
300°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
Dimensions in inches  
and (millimeters)  
®
1.0 (25.4)  
MIN.  
Mechanical Data  
0.034 (0.86)  
Case: JEDEC DO-204AL, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.028 (0.71)  
DIA.  
0.026 (0.66)  
0.023 (0.58)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.012 oz., 0.34 g  
NOTE: Lead diameter is  
for suffix "E" part numbers  
Dimensions in inches and (millimeters)  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol 1N4933GP 1N4934GP 1N4935GP 1N4936GP 1N4937GP Unit  
*Maximum repetitive peak reverse voltage  
*Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
145  
200  
400  
280  
400  
600  
420  
600  
V
V
V
*Maximum DC blocking voltage  
100  
*Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=75°C  
IF(AV)  
1.0  
A
*Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Typical thermal resistance (1)  
RΘJA  
55  
°C/W  
°C  
*Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
*Maximum instantaneous forward voltage at 1.0A  
VF  
1.2  
V
*Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=125°C  
5.0  
100  
IR  
µA  
*Maximum reverse recovery time at  
IF=1.0A, VR=30V  
trr  
200  
15  
ns  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
pF  
Notes:  
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Document Number 88509  
27-Feb-02  
www.vishay.com  
1
12

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