Datasheet > 1N4751A-G

1N4751A-G

更新时间： 2024-11-24 04:45:59

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管
页数	文件大小	规格书
5页	399K
描述
SILICON ZENER DIODE

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中文翻译

获取价格

数据手册

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1N4751A-G 数据手册

1N4728A-G~1N4764A-G

SILICON ZENER DIODE

3.3 to 100 Volts

VOLTAGE

FEATURES

POWER

1.0 Watts

• Low profile package

• Built-in strain relief

• Low inductance

• High temperature soldering : 260°C /10 seconds at terminals

• Glass package has Underwriters Laboratory Flammability

Classification

• Pb free product are available : 99% Sn above can meet RoHS

environment substance diective request

MECHANICALDATA

• Case: Molded Glass DO-41G

• Terminals: Axial leads, solderable per MIL-STD-750,

Method 2026 guaranteed

• Polarity: Color band denotes positive end

• Mounting position:Any

• Weight: 0.012 ounce, 0.336 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Units

Power Dissipation at Tamb = 25 ^OC

TOT

Junction Temperature

150

^OC

Storage Temperature Range

-65 to + 200

TSTG

*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Parameter

Symbol

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

170*

1.2

K/W

R_θJA

Forward Voltage at I_F= 200mA

V_F

*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

STAD-MAY.17.2006

PAGE . 1

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