1N4750C

更新时间： 2024-11-20 04:45:59

品牌	Logo	应用领域
EIC		稳压二极管测试
页数	文件大小	规格书
2页	114K
描述
SILICON ZENER DIODES

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中文翻译

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数据手册

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1N4750C 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

SILICON ZENER DIODES

1N4728C - 1N4764C

Z1110C - Z1300C

DO - 41

VZ : 3.3 - 300 Volts

P^D: 1 Watt

FEATURES :

1.00 (25.4)

0.107 (2.7)

MIN.

* Complete voltage range 3.3 to 300 Volts

* High peak reverse power dissipation

* High reliability

0.080 (2.0)

0.205 (5.2)

0.166 (4.2)

* Low leakage current

* Pb / RoHS Free

MECHANICAL DATA

1.00 (25.4)

0.034 (0.86)

MIN.

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

0.028 (0.71)

Dimensions in inches and ( millimeters )

* Weight : 0.339 gram

MAXIMUM RATINGS

Rating at 25°C ambient temperature unless otherwise specified.

Rating

Symbol

P_D

Value

1.0

Unit

Watt

Volts

K / W

°C

DC Power Dissipation at T_L= 50 °C (Note1)

Maximum Forward Voltage at I_F= 200 mA

V_F

1.2

R_ӨJA

T_J

Maximum Thermal Resistance Junction to Ambient Air (Note2)

Junction Temperature Range

170

- 55 to + 175

T_STG

Storage Temperature Range

°C

Notes :

(1) TL = Lead temperature at 3/8 " (9.5mm) from body

(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case

Fig. 1 POWER TEMPERATURE DERATING CURVE

1.25

1.00

0.75

0.50

L = 3/8" (9.5mm)

0.25

100

125

150

175

TL, LEAD TEMPERATURE (°C)

Page 1 of 2

Rev. 04 : May 27, 2006

中文翻译

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