Datasheet > 1N4696DUR-1TRE3

1N4696DUR-1TRE3

更新时间： 2024-11-20 13:39:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	311K
描述
Zener Diode, 9.1V V(Z), 1%, 0.5W,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N4696DUR-1TRE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.8
配置：	SINGLE	二极管类型：	ZENER DIODE
元件数量：	1	最高工作温度：	175 °C
最大功率耗散：	0.5 W	标称参考电压：	9.1 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
最大电压容差：	1%	工作测试电流：	0.05 mA
Base Number Matches：	1

1N4696DUR-1TRE3 数据手册

1N4678UR thru 1N4717UR

(or MLL4678 thru MLL4717)

GLASS SURFACE MOUNT 0.5 WATT

ZENERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N4678UR thru 1N4717UR series of 0.5 watt glass surface mount

DO-213AA Zener voltage regulators provides selection from 1.8 to 43 volts

in standard 5% tolerances as well as tighter tolerances at a very low test

current of 50 µA. These are also available with an internal-metallurgical-

bond option by adding a “-1” suffix (see separate data sheet) including

military upgrade screening options. Microsemi also offers numerous other

Zener products to meet higher and lower power applications.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Surface mount equivalent to JEDEC registered

•

Regulates voltage over a broad operating current and

1N4678 thru 1N4717 series

temperature range

• Internal metallurgical bond option available by

adding a “-1” suffix (see separate data sheet for

same part numbers with “-1” suffix)

• DO-7 or DO-35 glass body axial-leaded Zener

equivalents also available per JEDEC registration

(see separate data sheet for part numbers 1N4678

thru 1N4717 series

•

Extensive selection from 1.8 to 43 V

Standard voltage tolerances are plus/minus 5% with

no suffix

•

Tight tolerances available in plus or minus 2% or 1%

with additional C or D suffix respectively

Hermetically sealed surface mount package

Nonsensitive to ESD per MIL-STD-750 Method 1020

Minimal capacitance (see Figure 3)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Operating and Storage temperature: -65^ºC to

• CASE: Hermetically sealed glass DO-213AA (SOD80

+175^ºC

or MLL34) MELF style package

• Thermal Resistance: 150^ºC/W junction to end cap

and 300^ºC/W junction to ambient when mounted on

FR4 PC board (1 oz Cu) with recommended footprint

(see last page Figure 1)

• Steady-State Power: 0.5 watts at end cap

temperature T_EC< 100^oC or ambient temperature T_A

< 25^ºC when mounted on FR4 PC board as

described for thermal resistance above (see Figure

2 for derating)

• TERMINALS: End caps tin-lead plated solderable per

MIL-STD-750, method 2026

• POLARITY: Cathode indicated by band where diode

is to be operated with the banded end positive with

respect to the opposite end for Zener regulation

• MARKING: cathode band only

• TAPE & REEL option: Standard per EIA-481-1-B with

12 mm tape, 2000 per 7 inch reel or 5000 per 13 inch

reel (add “TR” suffix to part number)

• WEIGHT: 0.04 grams

• See package dimensions on last page

• Forward voltage @100 mA: 1.5 volts (max)

• Solder Temperatures: 260 ^ºC for 10 s (max)

3-12-04 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N4696DUR-1TRE3相关器件

型号	品牌	获取价格	描述	数据表
1N4696DURTR	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS
1N4696DURTRE3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 1%, 0.5W,
1N4696E3	MICROSEMI	获取价格	Zener Diode, 9.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLAS
1N4696HR	DIGITRON	获取价格	Zener Diode
1N4696LEADFREE	CENTRAL	获取价格	Zener Diode, 9.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, DO-35, 2 PIN
1N4696RL	ONSEMI	获取价格	9.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GL
1N4696RL	MOTOROLA	获取价格	9.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GL
1N4696RL2	ONSEMI	获取价格	9.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GL
1N4696RR2	SYNSEMI	获取价格	Zener Diode, 9.1V V(Z), 5%, 0.5W,
1N4696-T	MCC	获取价格	Zener Diode,

与1N4696DUR-1TRE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4696DUR-1TRE3

1N4696DUR-1TRE3 技术参数

1N4696DUR-1TRE3 数据手册

与1N4696DUR-1TRE3相关器件

与1N4696DUR-1TRE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4696DUR-1TRE3

1N4696DUR-1TRE3 技术参数

1N4696DUR-1TRE3 数据手册

与1N4696DUR-1TRE3相关器件

与1N4696DUR-1TRE3相关文章

您还可以找

您在本页遇到什么问题？