Datasheet > 1N456.TR

1N456.TR

更新时间： 2024-11-16 20:00:39

品牌	Logo	应用领域
德州仪器 - TI		二极管
页数	文件大小	规格书
2页	36K
描述
0.2A, SILICON, SIGNAL DIODE, DO-35

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N456.TR 技术参数

生命周期：	Transferred	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.64
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-35
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	最大功率耗散：	0.5 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N456.TR 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

1N/FDLL 456/A - 1N/FDLL 459/A

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL456

FDLL456A BROWN

BROWN

WHITE

BLACK

BROWN

RED

FDLL457 RED

FDLL457A RED

FDLL458 RED

FDLL458A RED

RED

FDLL459A RED

LL-34

FDLL459

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

RED

High Conductance Low Leakage Diode

Sourced from Process 1M.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

456/A

457/A

458/A

459/A

125

175

200

I_O

Average Rectified Current

DC Forward Current

I_F

500

600

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

4.0

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/°C

°C/W

R_θ

中文翻译

下载PDF

与1N456.TR相关器件

型号	品牌	获取价格	描述	数据表
1N456/A	ETC	获取价格	LOW LEAKAGE DIODES
1N4560	MICROSEMI	获取价格	50 Watt Zener Diodes
1N4560	MOTOROLA	获取价格	ZENER DIODES
1N4560	NJSEMI	获取价格	50 WATTS ZENER DIODES
1N4560A	MICROSEMI	获取价格	SILICON 50 WATT ZENER DIODES
1N4560A	MOTOROLA	获取价格	5.1V, 50W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N4560A	NJSEMI	获取价格	Diode Zener Single 5.1V 10% 50W 3-Pin(2+Tab) TO-3
1N4560AE3	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 10%, 50W, Silicon, Unidirectional, TO-204AD, ROHS COMPLIANT, HERME
1N4560AR	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 10%, 50W, Silicon, Unidirectional
1N4560B	MICROSEMI	获取价格	50 Watt Zener Diodes