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1N4469 PDF预览

1N4469

更新时间: 2024-11-16 06:26:19
品牌 Logo 应用领域
CENTRAL 稳压二极管测试
页数 文件大小 规格书
2页 93K
描述
1.5 WATT ZENER DIODE

1N4469 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-41
包装说明:O-XALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.14
其他特性:HIGH PERFORMANCE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:9 Ω
JEDEC-95代码:DO-41JESD-30 代码:O-XALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.5 W认证状态:Not Qualified
标称参考电压:15 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:17 mA
Base Number Matches:1

1N4469 数据手册

 浏览型号1N4469的Datasheet PDF文件第2页 
TM  
1N4460  
THRU  
1N4496  
Central  
Semiconductor Corp.  
1.5 WATT ZENER DIODE  
6.2 VOLTS TO 200 VOLTS  
5% TOLERANCE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N4460  
Series silicon zener diode is a high quality voltage  
regulator for use in automotive, industrial,  
commercial, entertainment and computer  
applications.  
MARKING CODE: FULL PART NUMBER  
DO-41 CASE  
MAXIMUM RATINGS: (T =25°C )  
Power Dissipation  
Operating and Storage Temperature  
A
SYMBOL  
UNITS  
P
1.5  
-65 to +200  
W
D
T , T  
stg  
°C  
J
ELECTRICAL CHARACTERISTICS: (T =25°C) .  
A
ZENER  
MAXIMUM  
MAXIMUM MAXIMUM  
ZENER VOLTAGE  
@ I  
TEST  
MAXIMUM  
VOLTAGE  
REGULATION  
FACTOR**  
REVERSE  
CURRENT  
DC  
SURGE  
V
CURRENT  
ZENER IMPEDANCE  
Z
ZT  
CURRENT CURRENT*  
TYPE  
∆V  
Z
MIN  
V
NOM  
V
MAX  
V
I
Z
@ I  
Z
@ I  
I
@ V  
I
I
S
ZT  
ZT  
ZT  
ZT  
ZK  
R
R
ZM  
mA  
mA  
µA  
V
mA  
230  
210  
191  
174  
157  
143  
130  
119  
110  
95  
A
V
1N4460  
1N4461  
1N4462  
1N4463  
1N4464  
1N4465  
1N4466  
1N4467  
1N4468  
1N4469  
1N4470  
1N4471  
1N4472  
1N4473  
1N4474  
1N4475  
1N4476  
1N4477  
1N4478  
1N4479  
1N4480  
5.89  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
11  
6.51  
40  
4.0  
2.5  
2.5  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10  
200  
200  
400  
400  
500  
500  
550  
550  
550  
600  
600  
650  
650  
650  
700  
700  
750  
800  
850  
900  
950  
1.0  
1.0  
20  
5.0  
1.0  
0.5  
0.3  
0.5  
0.3  
0.2  
0.1  
3.72  
4.08  
5.5  
0.35  
0.30  
0.35  
0.40  
0.45  
0.50  
0.55  
0.60  
0.65  
0.75  
0.80  
0.83  
0.95  
1.00  
1.10  
1.30  
1.40  
1.50  
1.70  
1.80  
1.90  
6.46  
7.14  
37  
5.0  
7.13  
7.88  
34  
0.5  
4.50  
4.5  
7.79  
8.61  
31  
0.5  
4.92  
3.9  
8.65  
9.56  
28  
0.5  
5.46  
3.4  
9.50  
10.50  
11.55  
12.60  
13.65  
15.75  
16.80  
18.90  
21.00  
23.10  
25.20  
28.35  
31.50  
34.65  
37.80  
40.95  
45.15  
25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
8.00  
3.0  
10.45  
11.40  
12.35  
14.25  
15.20  
17.10  
19.00  
20.90  
22.80  
25.65  
28.50  
31.35  
34.20  
37.05  
40.85  
23  
8.80  
2.6  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
21  
9.60  
2.4  
19  
10.40  
12.00  
12.80  
14.40  
16.00  
17.60  
19.20  
21.60  
24.00  
26.40  
28.80  
31.20  
34.40  
2.2  
17  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
1.8  
15.5  
14  
90  
1.6  
11  
79  
1.4  
12.5  
11.5  
10.5  
9.5  
8.5  
7.5  
7.0  
6.5  
6.0  
12  
71  
1.2  
14  
65  
1.1  
16  
60  
0.90  
0.80  
0.75  
0.66  
0.60  
0.54  
0.48  
18  
53  
20  
48  
25  
43  
27  
40  
30  
37  
40  
33  
*
Ratings shown are for peak 1/2 sinusoidal surge current of 8.3ms duration, non-repetative.  
**Zener voltage shall be measured at 10% of the I  
(Maximum DC Current). The current shall then be increased  
ZM  
to 50% of the I  
and maintained at this level for a period of 90 seconds, at which time the absolute value of the  
ZM  
change in Zener voltage (V @ 10% – V @ 50% ) shall not exceed the Zener Voltage Regulation Factor. The  
Z
Z
R2 (17-May 2007)  
device is to be suspended by its leads 3/8” from the body in free air at 25°C.  

1N4469 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N4469 MICROSEMI

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