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1N4245GP/73 PDF预览

1N4245GP/73

更新时间: 2023-01-02 13:50:40
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 328K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N4245GP/73 数据手册

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1N4245GP thru 1N4249GP  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
* Maximum  
Test condition  
at 1.0 A  
Symbol 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP Unit  
VF  
1.2  
V
instantaneous forward  
voltage  
* Maximum reverse  
current at rated DC  
blocking voltage  
T
A = 25 °C  
IR  
1.0  
25  
µA  
pF  
TA = 125 °C  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
8.0  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP Unit  
Typical thermal resistance(1)  
RθJA  
RθJL  
55  
25  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
25  
20  
15  
10  
5.0  
0
60 Hz  
Resistive or  
Inductive Load  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
0.375" (9.5mm)  
Lead Length  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Ambient Temperature, °C  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88506  
14-Sep-05  

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