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1N4154 PDF预览

1N4154

更新时间: 2024-01-26 01:55:37
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 小信号开关二极管
页数 文件大小 规格书
3页 332K
描述
SMALL SIGNAL SWITCHING DIODE

1N4154 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.62外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.1 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:35 V
最大反向电流:0.1 µA最大反向恢复时间:0.002 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4154 数据手册

 浏览型号1N4154的Datasheet PDF文件第2页浏览型号1N4154的Datasheet PDF文件第3页 
GALAXY ELECTRICAL  
1N4154  
BL  
REVERSE VOLTAGE : 25 V  
CURRENT: 0.15 A  
SMALL SIGNAL SWITCHING DIODE  
FEATURES  
Silicon epitaxial planar diode  
High speed switching diode  
500 mW power dissipation  
DO-35  
MECHANICAL DATA  
Case: DO-35,glass case  
Polarity: Color band denotes cathode  
Weight: 0.004 ounces, 0.13 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at ambient temperature unless otherwise specified.  
25  
MAXIMUM RATINGS  
UNITS  
1N4154  
25  
Reverse voltage  
Peak reverse voltage  
Average forw ard rectified current  
half w ave rectification w ith resistive load  
VR=0V  
V
V
VR  
VRM  
35  
mA  
IF(AV)  
1501)  
Forw ard surge current @ tP=1m s  
2.0  
A
mW  
IFSM  
Ptot  
TJ  
5001)  
Pow er dissipation  
@ T =  
25  
A
Junction temperature  
Storage temperature range  
1)Valid provided that leads at a distance of 8 mm f rom case are kept at ambient temperature.  
175  
-55 --- +175  
TSTG  
ELECTRICAL CHARACTERISTICS  
MIN  
-
TYP  
-
MAX  
1.0  
UNITS  
V
Forw ard voltage @ IF=30mA  
Leakage current  
VF  
@ VR=25V  
@ VR=25V TJ=150  
-
-
-
-
-
-
100  
100  
nA  
μA  
pF  
IR  
IR  
Capacitance  
@ V =0V,f=1MH ,VHF=50mV  
CJ  
4.0  
z
Reverse breakdownRvoltage  
tested with 5μA pulses  
35  
-
-
V
V(BR)R  
trr  
Reverse recovery time  
fromIF=10mA to IR=10mA to IR=1mA  
fromIF=10mA to IR=1mA, VR=6V. R =100Ω.  
Thermal resistance junction to ambient  
Rectification efficiency @ 100MHz,VRF=2V  
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.  
-
-
4
2
ns  
ns  
K/W  
-
L
5001)  
RθJA  
0.45  
-
-
ηv  
www.galaxycn.com  
Document Number 0268041  
BLGALAXY ELECTRICAL  
1.  

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