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1N4148WS-HE3-18 PDF预览

1N4148WS-HE3-18

更新时间: 2024-01-09 16:49:21
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管测试光电二极管
页数 文件大小 规格书
5页 97K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

1N4148WS-HE3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOD-323, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:5.03
应用:FAST RECOVERY最小击穿电压:75 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.35 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
参考标准:AEC-Q101最大重复峰值反向电压:100 V
最大反向电流:100 µA最大反向恢复时间:0.004 µs
反向测试电压:100 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1N4148WS-HE3-18 数据手册

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1N4148WS  
Vishay Semiconductors  
www.vishay.com  
Small Signal Fast Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching diodes  
• AEC-Q101 qualified available  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101  
qualified  
MARKING (example only)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
XY  
22610  
MECHANICAL DATA  
Bar = cathode marking  
XY = type code  
Case: SOD-323  
Weight: approx. 4.3 mg  
Packaging codes / options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
DESIGN SUPPORT TOOLS click logo to get started  
Models  
Available  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
TYPE MARKING  
REMARKS  
1N4148WS-E3-08 or 1N4148WS-E3-18  
1N4148WS-HE3-08 or 1N4148WS-HE3-18  
1N4148WS  
Single  
A2  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
75  
UNIT  
Reverse voltage  
VR  
V
Repetitive peak reverse voltage  
VRRM  
100  
Average rectified current half wave  
rectification with resistive load (1)  
f 50 Hz  
IF(AV)  
150  
mA  
Surge forward current  
Power dissipation (1)  
t < 1 s and Tj = 25 °C  
IFSM  
Ptot  
350  
200  
mW  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +150  
°C  
Top  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 2.3, 06-Jul-17  
Document Number: 85751  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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